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PD-94011A
SMPS MOSFET
Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements l Solder plated and leadformed for surface mounting Description
Third Generation HEXFET(R)s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. This plated and leadformed version of the TO-247 package allows the package to be surface mounted in an application.
IRFP460AS
HEXFET(R) Power MOSFET
Rds(on) max
0.27
ID
20A
SMD-247
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Mounting torqe, 6-32 or M3 screw Maximum Reflow Temperature
Max.
20 13 80 280 2.2 30 3.8 -55 to + 150 10 lbf*in (1.1N*m) 230 (Time above 183 C should not exceed 100s)
Units
A W W/C V V/ns C
C
Typical SMPS Topologies: l Full Bridge l PFC Boost www.irf.com
Notes through are on page 8
1
01/17/01
IRFP460AS
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.61 --- V/C Reference to 25C, ID = 1mA --- --- 0.27 VGS = 10V, ID = 12A 2.0 --- 4.0 V VDS = VGS , ID = 250A --- --- 25 VDS = 500V, VGS = 0V A --- --- 250 VDS = 400V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 11 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 18 55 45 39 3100 480 18 4430 130 140 Max. Units Conditions --- S VDS = 50V, ID = 12A 105 ID = 20A 26 nC VDS = 400V 42 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 20A ns --- RG = 4.3 --- RD = 13, See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
960 20 28
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- 0.24 ---
Max.
0.45 --- 40
Units
C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol 20 --- --- showing the A G integral reverse --- --- 80 S p-n junction diode. --- --- 1.8 V TJ = 25C, IS = 20A, VGS = 0V --- 480 710 ns TJ = 25C, IF = 20A --- 5.0 7.5 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP460AS
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
20s PULSE WIDTH TJ = 25 C
1 10 100
4.5V
0.1 0.1
1 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
20A ID = 19A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 C
10
2.5
2.0
TJ = 25 C
1.5
1
1.0
0.5
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFP460AS
100000
VGS , Gate-to-Source Voltage (V)
10000
V G S = 0V, f = 1M Hz C is s = C g s + C g d , Cd s SHO RTED C rs s = C g d C oss = C ds + C gd
20
20A ID = 19A
16
VDS = 400V VDS = 250V VDS = 100V
C, Capacitance (pF)
C iss
1000
12
C o ss
100
8
10
C rss
4
1 1 10 100 1000
A
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80 100
V D S , D ra in-to-S ource V oltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10
I D , Drain Current (A)
TJ = 150 C
100 10us
TJ = 25 C
1
100us 10 1ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP460AS
20
VDS VGS
RD
D.U.T.
+
I D , Drain Current (A)
15
RG
-VDD
10V
10
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.1
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP460AS
2400
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
2000
VDS
L
D R IV E R
TOP BOTTOM ID 8.9A 13A 20A
1600
RG
20V tp
D .U .T
IA S
+ V - DD
A
1200
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
800
400
0 25 50 75 100 125 150
Starting TJ , Junction Temperature( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
V D Sa v , A valanche V oltage (V )
620
600
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
580
50K 12V .2F .3F
560
D.U.T. VGS
3mA
+ V - DS
540 0 4 8 12 16 20
A
I av , A v alanche C urrent (A)
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRFP460AS
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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7
IRFP460AS
SMD-247 Package Outline
A B 15.90 [.625] 15.30 [.603] 3.65 [.143] O 3.55 [.140] 0.25 [.010] 5.70 [.224] 5.30 [.209] DB 5.30 [.208] 4.70 [.186] 2.50 [.099] 1.50 [.060] 0.25 [.010] 13.70 [.539] 13.50 [.532] DB
5.50 [.217]
4 2.75 [.108] 2.25 [.089] 16.20 [.637] 16.00 [.630] 4
0.95 [.037] 0.35 [.014]
20.30 [.799] 19.70 [.776]
2X R
D
C 1 5.65 [.222] 4.65 [.183] 2 3
3.0 [.118] MAX.
0.20 [.225] D 5.45 [.215] 2X 0.25 [.010] 1.40 [.055] 1.00 [.040] DCA 2X 2.65 [.104] 2.15 [.085] LEAD AS SIGNMENT S NOT E S: 1. 2. 3. 4. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. CONT ROLLING DIMENSION: MILLIMET ER. DIMENS IONS ARE SHOWN IN MILLIMET E RS [INCHE S]. T O-247 S MD IS A MODIF IE D T O-247AC. MOSF ET 1 - GAT E 2 - DRAIN 3 - SOURCE 4 - DRAIN IGBT 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR
2X
0.80 [.031] 0.40 [.016]
SMD-247 Part Marking Information
EXAMPLE: T HIS IS AN IRF P450S WITH AS S EMBLY LOT CODE 3A1Q PART NUMBER INTERNAT IONAL RECT IF IER LOGO AS S EMBLY LOT CODE
IRFP450S
3A1Q 9906
DATE CODE (YYWW) YY = YEAR WW = WEEK
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 4.3mH
R G = 25, IAS = 20A. (See Figure 12)
ISD 20A, di/dt 125A/s, VDD V(BR)DSS,
TJ 150C
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00
8
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